Announces
News
4x4 mm SMT LNAs for Microwave Radio, Military & Space, VSAT, Test & Sensors
Three New LNAs Support High Dynamic Range Applications from 2 to 28 GHz
Hittite Microwave Corporation has introduced three new SMT packaged GaAs pHEMT/HEMT MMIC Low Noise Amplifiers (LNAs) which are ideal for microwave radio, VSAT, military & space, sensors and test instrumentation applications from 2 to 28 GHz.
The HMC751LC4, HMC752LC4 and the HMC772LC4 are GaAs pHEMT/HEMT MMIC Low Noise Amplifiers which are rated from 17 to 27 GHz, 24 to 28 GHz, and from 2 to 12 GHz respectively. These LNAs also feature high dynamic range and excellent input and output return losses, making them ideal for high capacity microwave radio, VSAT and other demanding applications from 2 to 28 GHz. The HMC751LC4, HMC752LC4 and the HMC772LC4 have been designed to provide noise figure as low as 1.8 dB with up to 25 dB of gain, and +26 dBm output IP3 from a single supply of +3V/+4V. These LNAs are also capable of supplying up to +13 dBm P1 dB output power, which enables them to function as LO drivers for Hittite's wide range of balanced, I/Q or image reject mixers.
The HMC751LC4, HMC752LC4 and the HMC772LC4 are housed in RoHS compliant 4x4 mm ceramic SMT packages, feature I/Os that are DC blocked and internally matched to 50 Ohms, and are ideal for integration into Multi-Chip-Modules (MCMs).
New X-Band Amplifier Module Delivers Ultra Low Phase Noise
Targets High Resolution Radar & X-Band Synthesizers with -167 dBc/Hz Phase Noise at 1 kHz Offset
Hittite Microwave Corporation has introduced a new GaAs HBT Ultra Low Phase Noise Amplifier module which is ideal for high performance applications in microwave radio, military & space, radar systems, test instrumentation and synthesizers from 6 to 12 GHz.
The HMC-C072 is a GaAs HBT Ultra Low Phase Noise Amplifier module which provides a phase noise contribution of -167 dBc/Hz at 1 kHz offset, enabling superior modulation accuracy in high resolution radar and X-band synthesizer applications. This amplifier module also provides high dynamic range and exhibits 11 dB of gain, 4.5 dB noise figure and up to +24 dBm of output IP3. Also ideal for transceiver architectures, the HMC-C072 delivers up to 22 dBm of saturated output power and typical gain flatness of ±1 dB with minimal variation over temperature.
Specified for -55C to +85C temperature operation and housed in a miniature hermetic module with field replaceable SMA connectors, the HMC-C072 operates from a +7V single supply, and consumes only 170 mA.
The HMC-C072 complements Hittite's expanding line of low phase noise amplifier products which are available in die, SMT and connectorized module formats, with frequency coverage up to 18 GHz.
New SP4T Switch Module Delivers Low Insertion Loss from DC to 20 GHz
High Linearity Switch for Demanding Test & Measurement, Fiber Optics, Military & Space
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaAs pHEMT MMIC SP4T switch module which is ideal for use in microwave radio, VSAT, military & space, fiber optic and broadband test applications from DC to 20 GHz.
The HMC-C071 is a general purpose, broadband, non-reflective GaAs pHEMT SP4T switch which is rated for operation from DC to 20 GHz. This broadband operation combined with high isolation of better than 32 dB up to 20 GHz, and low insertion loss of 3.5 dB up to 20 GHz, makes the HMC-C071 ideal for a wide range of applications spanning microwave radio, VSAT, radar, telecom and test instrumentation. The HMC-C071 also features very fast rise and fall time specifications of 17 ns. High P1dB and input IP3 performance of +24 dBm and +40 dBm respectively from 0.5 GHz to 20 GHz, also make the HMC-C071 ideal for applications requiring high linearity. A CMOS interface allows the HMC-C071 to operate with control voltages of 0 and +5V from a single +5V supply, while drawing only 1.4 mA.
The HMC-C071 is specified for -55C to +85C temperature operation and housed in a miniature hermetic module with field replaceable SMA connectors.
The HMC-C071 complements Hittite's broad line of SPST, SPDT and SPNT switch products which are available in die, SMT and connectorized module formats, with frequency coverage from DC to 86 GHz.
New HBT Driver Amplifier for Cellular/3G and WiMAX/4G Applications
New Driver Amplifier Delivers up to +27 dBm Output Psat from 700 MHz to 2.8 GHz
Hittite Microwave Corporation has introduced a new SMT MMIC Driver Amplifier which is ideal for high linearity applications in Cellular/3G, WiMAX/4G, and fixed wireless equipment applications from 700 MHz to 2.8 GHz.
The HMC789ST89E is a GaAs InGaP HBT Driver Amplifier MMIC which is rated from 700 MHz to 2.8 GHz. Simple external matching allows the HMC789ST89E to deliver up to 18 dB gain, +25 dBm output P1dB, and up to +45 dBm output IP3 in selected 3G/4G frequency bands. The active on-chip bias circuit allows the HMC789ST89E to exhibit excellent gain and output power stability over temperature, and to provide up to 45% power added efficiency (PAE) under high incident power levels. The high output IP3, high gain, and low quiescent current make the HMC789ST89E ideal for use in PA driver & pre-driver applications in Cellular/3G, WiMAX/4G and fixed wireless transceivers.
The HMC789ST89E is packaged in an industry standard RoHS compliant SOT-89 package and consumes only 125 mA from a single +5V supply.
75 Ohm Push-Pull Amplifier is Ideal for CATV Infrastructure and Subscribers
Dual Channel Gain Block Covers DC to 1000 MHz and Delivers up to +78 dBm Output IP2
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new SMT MMIC Dual Channel Gain Block Amplifier which is ideal for push-pull applications in CATV/broadband infrastructure and subscriber applications from DC to 1000 MHz.
The HMC754S8GE is a GaAs InGaP HBT, Dual Channel Gain Block MMIC Amplifier which is rated from DC to 1000 MHz. When configured with external baluns for push-pull operation, this high linearity gain block delivers 14.5 dB gain, +38 dBm output IP3, and up to +78 dBm output IP2. This versatile MMIC amplifier exhibits excellent gain and output power stability over temperature, and requires a minimal number of external bias components. Simple external matching allows the HMC754S8GE to be optimized for ±0.5 dB gain flatness from 50 to 1000 MHz. The HMC754S8GE is ideal for 75 Ohm applications in CATV set top boxes, line amplifiers, and fiber nodes.
The HMC754S8GE is housed in an industry standard RoHS compliant SOIC-8 package with an exposed ground paddle, and consumes only 160 mA from a single +5V supply.
New Double-Balanced Mixers Deliver IIP3 up to +40 dBm
New High Linearity Mixer Family is Ideal for Cellular/4G Infrastructure Transceivers
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new SiGe BiCMOS MMIC Mixer RFICs which are ideal for upconversion and downconversion applications in broadband, Cellular/3G, WiMAX/4G and test equipment applications from 700 MHz to 2.2 GHz.
The HMC785LP4E and HMC786LP4E are SiGe BiCMOS Mixer RFICs which are rated from 0.7 to 1.1 GHz and 1.7 to 2.2 GHz, respectively. Both products consist of a high linearity double-balanced mixer core and a matched local oscillator (LO) amplifier which combine to deliver up to +40 dBm input IP3 with only 0 dBm of input LO drive. The HMC785LP4E and HMC786LP4E feature singled-ended LO and RF ports, while the differential IF ports support intermediate frequencies from 50 to 300 MHz. The HMC785LP4E and HMC786LP4E are optimized for high side and low side LO inputs respectively, and exhibit conversion loss as low as 7.5 dB with up to 30 dB of LO to RF and LO to IF isolation. 
These compact mixer RFICs are ideal for upconversion and downconversion applications in GSM, WCDMA, TD-SCDMA, WiBro and WiMAX.
The HMC785LP4E and HMC786LP4E are housed in footprint compatible RoHS compliant leadless 4x4 mm QFN SMT packages, operate from a single +5V supply, and are ideal for cellular/3G and WiMAX/LTE/4G infrastructure applications.
